AO6604 20v complementary mosfet general description product summary n-channel p-channel v ds = 20v -20v i d = 3.4a (v gs =4.5v) -2.5a (v gs =-4.5v) r ds(on) r ds(on) < 65m (v gs =4.5v) < 75m (v gs =-4.5v) < 75m (v gs =2.5v) < 95m (v gs =-2.5v) < 100m (v gs =1.8v) < 115m (v gs =-1.8v) the AO6604 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. g2 d2 s2 g1 d1 s1 n - channel p - channel tsop6 top view bottom view pin1 s2 s1 g2 g1 d2 d1 top view 1 2 3 4 5 6 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl -20 drain-source voltage 20 v units parameter c/w r q ja 78 -2 -13 units 110 2.5 0.7 13 w c a -2.5 3.4 1.1 1.1 0.7 -55 to 150 t a =70c parameter typ max absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel gate-source voltage 8 v thermal characteristics 8 t a =70c junction and storage temperature range maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 64 t a =25c continuous drain current t a =25c i d 80 106 150 power dissipation b p d pulsed drain current c maximum junction-to-ambient a g2 d2 s2 g1 d1 s1 n - channel p - channel tsop6 top view bottom view pin1 s2 s1 g2 g1 d2 d1 top view 1 2 3 4 5 6 rev 4: sep 2010 www.aosmd.com page 1 of 9
AO6604 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.4 0.7 1 v i d(on) 13 a 51 65 t j =125c 68 85 58 75 m w 68 100 m w g fs 16 s v sd 0.7 1 v i s 1.5 a c iss 205 260 320 pf c oss 33 48 63 pf c rss 16 27 38 pf r g 1.5 3 4.5 w q g (4.5v) 2.9 3.8 nc q gs 0.4 nc q gd 0.6 nc t d(on) 2.5 ns t r 3.2 ns t d(off) 21 ns reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =3.4a forward transconductance diode forward voltage i s =1a,v gs =0v v ds =5v, i d =3.4a v gs =2.5v, i d =3a v gs =1.8v, i d =2a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current m w gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =10v, i d =3.4a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =2.95 w , r gen =3 w t d(off) 21 ns t f 3 ns t rr 14 19 ns q rr 3.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =3.4a, di/dt=100a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =3.4a, di/dt=100a/ m s turn-off delaytime r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: sep 2010 www.aosmd.com page 2 of 9
AO6604 n-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 4 8 12 16 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 40 60 80 100 120 0 3 6 9 12 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =3.4a v gs =1.8v i d =2a v gs =2.5v i d =3a 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v 0 4 8 12 16 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 2.5v 4.5v v gs =1.8v 40 0 4 8 12 16 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 40 60 80 100 120 0 3 6 9 12 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (notee) 25 c 125 c 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =3.4a v gs =1.8v i d =2a v gs =2.5v i d =3a 40 60 80 100 120 0 2 4 6 8 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v i d =3.4a 25 c 125 c 0 4 8 12 16 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 2.5v 4.5v v gs =1.8v rev 4: sep 2010 www.aosmd.com page 3 of 9
AO6604 n-channel: typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =3.4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 1 2 3 4 5 0 1 2 3 4 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =3.4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150 c/w t on t p d single pulse rev 4: sep 2010 www.aosmd.com page 4 of 9
AO6604 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 4: sep 2010 www.aosmd.com page 5 of 9
AO6604 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.4 -0.65 -1 v i d(on) -13 a 56 75 t j =125c 80 105 70 95 m w 85 115 m w g fs 13 s v sd -0.7 -1 v i s -1.5 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23 w q g (4.5v) 8.5 11 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t r 36 ns t d(off) 53 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =4 w , r gen =6 w gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-10v, i d =-2.5a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-2.5a v gs =-2.5v, i d =-2a v gs =-1.8v, i d =-1a v ds =v gs i d =-250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-2.5a reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters t d(off) 53 ns t f 56 ns t rr 37 49 ns q rr 27 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-2.5a, di/dt=100a/ m s turn-off delaytime r gen =6 w turn-off fall time body diode reverse recovery time i f =-2.5a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: sep 2010 www.aosmd.com page 6 of 9
AO6604 p-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 50 70 90 110 130 150 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-2.5a v gs =-2.5v i d =-2a v gs =-1.8v i d =-1a 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2v -4v -2.5v - 3v - 3.5v -4.5v v gs =-2.5v 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 50 70 90 110 130 150 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-2.5a v gs =-2.5v i d =-2a v gs =-1.8v i d =-1a 40 60 80 100 120 140 160 180 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-2.5a 25 c 125 c 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2v -4v -2.5v - 3v - 3.5v -4.5v v gs =-2.5v rev 4: sep 2010 www.aosmd.com page 7 of 9
AO6604 p-channel: typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-2.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-2.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150 c/w rev 4: sep 2010 www.aosmd.com page 8 of 9
AO6604 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 4: sep 2010 www.aosmd.com page 9 of 9
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